PART |
Description |
Maker |
2SK1085-M |
N-channel MOS-FET 3 A, 150 V, 1.17 ohm, N-CHANNEL, Si, POWER, MOSFET
|
Fuji Electric Holdings Co., Ltd. FUJI[Fuji Electric] http://
|
3SK134B 3SK134B-T1 3SK134B-VM 3SK134B-T2 |
Dual-gate MOS FET RF AMP. FOR UHF TV TUNER N-CHANNEL SILICON DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD
|
NEC
|
CM150DY-24H |
Dual IGBTMOD 150 Amperes/1200 Volts 150 A, 1200 V, N-CHANNEL IGBT
|
Powerex Power Semicondu... Powerex Power Semiconductors Powerex, Inc.
|
TPC8405 |
Field Effect Transistor Silicon N, P Channel MOS Type (P Channel U−MOS IV/N Channel U-MOS III)
|
Toshiba Semiconductor
|
PHP206 |
Dual P-channel enhancement mode MOS transistor 5600 mA, 30 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, MS-012AA
|
NXP Semiconductors N.V. PHILIPS[Philips Semiconductors]
|
MBRF20H150CTG MBR20H150CTG |
20 A,150 V H-Series Dual Schottky Rectifier 10 A, 150 V, SILICON, RECTIFIER DIODE, TO-220AB SWITCHMODE?/a> Power Rectifier 150 V, 20 A SWITCHMODE Power Rectifier 150 V, 20 A SWITCHMODE垄芒 Power Rectifier 150 V, 20 A
|
ON Semiconductor
|
RFT3055 RFT3055LE HGTG20N120CND FN4537 |
2.0A, 60V, 0.150 Ohm, N-Channel, Logic Level, ESD Rated, Power MOSFET 2.0安培0V的,0.150 Ohm的N通道,逻辑层次,额定静电,功率MOSFET 2.0A/ 60V/ 0.150 Ohm/ N-Channel/ Logic Level/ ESD Rated/ Power MOSFET 63A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode 2.0A 60V 0.150 Ohm N-Channel Logic Level ESD Rated Power MOSFET From old datasheet system
|
Fairchild Semiconductor, Corp. INTERSIL[Intersil Corporation]
|
BF1206F |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
NXP Semiconductors
|
BF1206 |
Dual N-channel dual-gate MOS-FET
|
Philips Semiconductors
|
UPA603 UPA603T PA603T G11250EJ1V0DS00 UPA603T-A |
100 mA, 50 V, 2 CHANNEL, P-CHANNEL, Si, SMALL SIGNAL, MOSFET From old datasheet system MOS Field Effect Transistor P-CHANNEL MOS FET 6-PIN 2 CIRCUITS
|
NEC[NEC] NEC Corp.
|